EE 488—Fundamentals of Modern VLSI Devices

Device fundamentals of deep submicron and nano-scale CMOS and BiCMOS circuits. Device parameters and performance factors are covered that are important for VLSI devices of deep-submicron dimensions. The course first reviews silicon materials properties, basic physics of p-n junctions and MOS capacitors, and fundamental principles of MOSFET and bipolar transistors. Then we discuss the design and optimization of MOSFET and bipolar devices for VLSI applications, interdependency and tradeoffs of device parameters pertaining to circuit performance and manufacturability. Covered are short-channel effects, controlling the scaling parameter by vertical and lateral impurity doping profile, and scaling into the nano-dimensions for future VLSI. We also discuss effects in small-dimension devices: quantization in surface inversion layer in a MOSFET device, discrete dopant effects due to small device volume, etc.