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This course provides a comprehensive introduction to the physics and operation of semiconductor materials and devices, serving as a foundation for advanced studies and research in microelectronics, nanoelectronics, and optoelectronics. The first part covers semiconductor materials, including electron energy bands and states, carrier statistics, current transport in homogeneous semiconductors, and the behavior of nonhomogeneous structures. The second part focuses on semiconductor devices, beginning with diodes, pn homojunctions, and heterojunctions, and progressing to field-effect transistors (FETs), including MOSFETs and other advanced FET architectures. Optional topics may include bipolar junction transistors (BJTs) with static and dynamic characteristics, optoelectronic devices, and power semiconductor devices. By integrating physical principles, device physics, and analytical modeling, students are expected to develop a strong understanding of how semiconductor devices are designed and operate within integrated circuits and emerging electronic technologies. This course is dual-listed with EE 530.
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